学際科学フロンティア研究所活動報告書_令和元年度
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○国際会議発表1. Atomic Diffusion Bonding of Wafers in Air using Thin Pt Films, T. Shimatsu, The International Conference Suga, Miyuki Uomoto, Takehito Shimatsu, Kenichi Iguchi, Haruo Nakazawa, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 4-. 3. ※ Novel Gratings for Astronomical Observations Fabricated by Latest Technologies, Noboru Ebizuka, Takayuki Okamoto, Minoru Sasaki, Ichi Tanaka, Miyuki Uomoto, Takehito Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 77-. 4. Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding, S. Matsuda, M. Uomoto, A. Miura, and T. Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600), pp. 67-. 5. Atomic Diffusion Bonding of Wafers using a-Ge Films with Extremely Low Electrical Conductivity, A. Muraoka, M. Uomoto, M. Abe, and T. Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 66-. 6. Atomic Diffusion Bonding of Wafers Using Thin Nb Films, M. Uomoto and T. Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 65-. 7. Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding, T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto and T. Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 64-. 8. Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications, G. Yonezawa, Y. Sato, S. Abe, M. Uomoto and T. Shimatsu, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, IEEE,(20190600),pp. 63-. 9. Temporary SiC-SiC Wafer Bonding Compatible with High Temperature Annealing, Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu, Proceedings of 2019 IEEE 69th Electronic Components and Technology Conference (ECTC),(20190500),pp. 989-994. 10. De-bondable SiC-SiC wafer bonding via an intermediate Ni nano-film, Mu, F. Uomoto, M. Shimatsu, T. Wang, Y. Iguchi, K. Nakazawa, H. Takahashi, Y. Higurashi, E. Suga, T., Applied Surface Science, 465 (20190100),pp. 591-595. 11. Near-Zero TCF of HAL SAW Resonator with LiTaO3-on-Quartz Structure, Michio Kadota, Yoshimi Yunoki, Takehito Shimatsu, Miyuki Uomot, Shuji Tanaka, Proceedings of 2018 IEEE International Frequency Control Symposium (IFCS),(20190100), pp. 1-4. on Wafer Bonding, WaferBond’19, 20191202, en, 2, Halle. 2. Microwave Assisted Switching on CoPtCr-Based Granular Media, N. Kikuchi, K. Sato, S. Kikuchi, S. Okamoto, O. Kitakami, T. Shimatsu, Magnetics and Optics Research International Symposium(MORIS ―39―

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